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The Mechanism of Inclusion Formation during Crystal-Growth by the Traveling Heater Method

Journal of Crystal Growth 149(3-4): 196-200

Autoren/Herausgeber: Barz RU
Gille P
Erschienen: 1995

Defects resulting from the crystallization of mother liquid inclusions are a common occurrence in crystals grown by the travelling heater method. The need to distinguish these defects from defects formed by solid-state precipitation is stressed. This paper reports on an investigation of Te inclusions in Cd1-xZnxTe crystals which were grown from Te-rich solution zones and it gives an explanation of the mechanism of their formation by interpreting the composition changes of the matrix surrounding them.