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Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM

Crystal Research and Technology 19(7): 881-891

Autoren/Herausgeber: Gille P
Mühlberg M
Parthier L
Rudolph P
Erschienen: 1984

Synthesis and growth of PbTe and (Pb, Sn)Te single crystals by the Bridgman method and by the Travelling Heater Method (THM) from Te-rich solutions are described. It is to be seen from comparative investigations that seeded THM growth reproducibly provides oriented single-crystalline ingots free of low-angle grain boundaries and with etch pit densities of 8-12 × 104 cm-2. All the materials were p-type with carrier concentrations from 1 to 2 × 1018 cm-3.

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