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Study of Hg vacancies in (Hg,Cd)Te after THM growth and post-growth annealing by positron annihilation

Journal of Crystal Growth 101(1-4): 512-516

Autoren/Herausgeber: Krause R
Klimakow A
Kiessling FM
Polity A
Gille P
Schenk M
Erschienen: 1990

Positron lifetime measurements have been performed to study vacancy defects in Hg0.78Cd0.22Te. Post-growth annealing under various Hg vapour pressure conditions have been used to create a well-defined number of Hg vacancies. The sensitivity range of the positron annihilation method was found to be 1015 < cHgvac<1018 cm-3. The obtained experience has been used to investigate THM-grown single crystals. The measured longitudinal and radial dependence of the vacancy concentration can be explained by the temperature profile in the grown (Hg,Cd)Te ingots.

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