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Growth of Hg1-Xmnxte Crystals by the Traveling Heater Method

Semiconductor Science and Technology 10(3): 353-357

Autoren/Herausgeber: Gille P
Rossner U
Puhlmann N
Niebsch H
Piotrowski TT
Erschienen: 1995

Growth of Hg1-xMnxTe (x approximate to 0.10) crystals by the travelling heater method (THM) is reported using a source material preparation process that has been previously developed for Hg1-xCdxTe. Feed ingots, as well as THM single crystals, were characterized with special emphasis on the compositional homogeneity that proved to be superior to the usual results with crystals grown by the Bridgman method so far.