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Reducing inversion twinning in single crystal growth of GaPO4

Crystal Research and Technology 37(6): 531-539

Autoren/Herausgeber: Grassl M
Barz RU
Gille P
Erschienen: 2002

Gallium orthophosphate (GaPO4) single crystals were grown by the reverse temperature gradient method from phosphoric acid solutions under hydrothermal conditions, Twins after (110) were studied by etching faces having been cut perpendicular to one of the twofold axes. Based on the determination of the twin boundary position as well as on the knowledge of the growth rates of different crystallographic forms, a few faces have been chosen to be quite promising for growing high-quality GaPO4 single crystals if they are offered at the referring seed crystal. From the characterization of the grown crystals conditions have been found, which may lead to the reduction of the inversion twin number during the growth process.